unisonic technologies co., ltd tip122 npn silicon transistor www.unisonic.com.tw 1 of 4 copyright ? 2008 unisonic technologies co., ltd qw-r204-016.b npn epitaxial transistor ? description the utc tip122 is a npn epitaxial transistor, designed for use in general purpose amplifier low-speed switching applications. *pb-free plating product number: tip122l ? ordering information ordering number pin assignment normal lead free plating package 1 2 3 packing TIP122-T60-K tip122l-t60-k to-126 e c b bulk tip122-ta3-t tip122l-ta3-t to-220 b c e tube
tip122 npn silicon transistor unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r204-016.b ? absolute maximum ratings (ta=25
) parameter symbol ratings unit collector to base voltage v cbo 100 v collector to emitter voltage v ceo 100 v emitter to base voltage v ebo 5 v ic collector current i c 5 a to-220 65 w power dissipation (t c =25
) to-126 p d 40 w junction temperature t j +150
storage temperature t stg -55 ~ +150
note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (ta=25
) parameter symbol test conditions min typ max unit collector-emitter breakdown voltage bv ceo i c =100ma 100 v collector-emitter satu ration voltage v ce(sat)1 i c =3a, i b =12ma 2 v collector-emitter satu ration voltage v ce(sat)2 i c =5a, i b =20ma 4 v base-emitter satura tion voltage v be(on) v ce =3v, i c =3a 2.5 v collector cut-off current i cbo v cb =100v 200 ua collector-cut-off current i ceo v ce =50v 500 ua emitter cut-off current i ebo v eb =5v 2 ma dc current gain h fe i c =500ma, v ce =3v i c =3a, v ce =3v 1000 1000
tip122 npn silicon transistor unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r204-016.b ? typical characteristics collector current, (ma) collector current, i c (a) base-emitter saturation voltage, v be(on) (mv) base-emitte voltage, v be (v) dc current gain, h fe collector-emitter saturation voltage, v ce(sat) (mv)
tip122 npn silicon transistor unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r204-016.b ? typical characteristics ambient temperature, t a 080 0.0 2.0 1.0 20 40 60 100120140160180 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 to-126 to-220 utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
|
